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insulated gate bipolar transistor withultrafast soft recovery diode v ces = 600v i c(nominal) = 24a t sc 5 s, t j(max) = 175c v ce(on) typ. = 1.57v ? low v ce (on) trench igbt technology ? low switching losses ? 5 s scsoa ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature coefficient. ? ultra fast soft recovery co-pak diode ? lead-free, rohs compliant ? automotive qualified * benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies dueto low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi absolute maximum ratings stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25 c, unless otherwise specified * qualification standards can be found at http://www.irf.com/ e g n-channel c applications ? air conditioning compressor ? ev inverter ? battery charger ? dc-dc converter gc e gate collector emitter to-247ac AUIRGP4062D1 to-247ad AUIRGP4062D1-e g c e c c e c g parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 55 i c @ t c = 100c continuous collector current 36 i nominal nominal current 24 i cm pulse collector current, v ge = 15v 72 i lm clamped inductive load current, v ge = 20v 96 a i f @ t c = 25c diode continous forward current 55 i f @ t c = 100c diode continous forward current 36 i fm diode maximum forward current 96 v ge continuous gate-to-emitter voltage 20 transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 217 p d @ t c = 100c maximum power dissipation 109 t j operating junction and t stg storage temperature range c soldering temperature, for 10 sec. (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case (igbt) CCC CCC 0.69 r jc (diode) thermal resistance junction-to-case (diode) CCC CCC 1.2 r cs thermal resistance, case-to-sink (flat, greased surface) CCC 0.24 CCC r ja thermal resistance, junction-to-ambient CCC 40 CCC -55 to +175 v w c/w

base part number package type standard pack complete part number form quantity AUIRGP4062D1 to-247ac tube 25 AUIRGP4062D1 AUIRGP4062D1-e to-247ad tube 25 AUIRGP4062D1-e ordering information downloaded from: http:///

notes: v cc = 80% (v ces ), v ge = 20v, l = 210 h, r g = 50 . pulse width limited by max. junction temperature. r is measured at t j of approximately 90c. maximum limits are based on statistical sample size characterization. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 v v ge = 0v, i c = 100 a ? v (br)ces / ? t j temperature coeff. of breakdown voltage 0.3 v/c v ge = 0v, i c = 10ma (25c-175c) 1.57 1.77 i c = 24a, v ge = 15v, t j = 25c v ce (o n) collector-to-emitter saturation voltage 1.87 i c = 24a, v ge = 15v, t j = 150c 1 . 9 4 i c = 24a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 6.5 v v ce = v ge , i c = 700 a ? v ge(th) / ? tj threshold voltage temp. coefficient -17 mv/c v ce = v ge , i c = 1.0ma (25c - 175c) gfe forward transconductance 12 s v ce = 50v, i c = 24a, pw = 20 s i ces collector-to-emitter leakage current 1.0 25 av ge = 0v, v ce = 600v 3 . 5m av ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop 1.57 i f = 24a 1 . 4 0 i f = 19a 1 . 4 7 i f = 24a, t j = 175c i ges gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) 51 77 i c = 24a q ge gate-to-emitter charge (turn-on) 14 21 nc v ge = 15v q gc gate-to-collector charge (turn-on) 21 32 v cc = 400v e on turn-on switching loss 532 754 i c = 24a, v cc = 400v, v ge = 15v e off turn-off switching loss 311 526 jr g = 10 , l = 210 h, t j = 25c e total total switching loss 843 1280 energy losses include tail & diode reverse recovery t d(on) turn-on delay time 19 36 i c = 24a, v cc = 400v, v ge = 15v t r rise time 24 41 ns r g = 10 , l = 210 h, t j = 25c t d(off) turn-off delay time 90 109 t f fall time 23 40 e on turn-on switching loss 726 i c = 24a, v cc = 400v, v ge =15v e off turn-off switching loss 549 jr g =10 , l= 210 h,t j = 175c e total total switching loss 1275 energy losses include tail & diode reverse recovery t d(on) turn-on delay time 12 i c = 24a, v cc = 400v, v ge = 15v t r rise time 23 ns r g = 10 , l = 200 h, l s = 150nh t d(off) turn-off delay time 92 t j = 175c t f fall time 84 c ies input capacitance 1487 v ge = 0v c oes output capacitance 118 v cc = 30v c res reverse transfer capacitance 44 f = 1.0mhz t j = 175c, i c = 96a rbsoa reverse bias safe operating area full square v cc = 480v, vp 600v rg = 10 , v ge = +20v to 0v scsoa short circuit safe operating area v cc = 400v, vp 600v rg = 10 , v ge = +15v to 0v erec reverse recovery energy of the diode 773 jt j = 175c t rr diode reverse recovery time 102 ns v cc = 400v, i f = 24a i rr peak reverse recovery current 32 a v ge = 15v, rg = 10 , l =210 h v pf conditions 5 s v downloaded from: http:///

fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j 175c; v ge =15v fig. 4 - reverse bias soa t j = 175c; v ge = 20v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 20 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 20 s 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 0 1 2 3 4 5 6 7 8 9 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 11v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 90 100 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 11v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v 25 50 75 100 125 150 175 t c (c) 0 10 20 30 40 50 60 i c ( a ) 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 p t o t ( w ) 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 175c single pulse dc downloaded from: http:///

fig. 7 - typ. igbt output characteristics t j = 175c; tp = 20 s fig. 8 - typ. diode forward characteristics tp = 20 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 20 s fig. 9 - typical v ce vs. v ge t j = -40c 5 1 01 52 0 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a 5 1 01 52 0 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a 5 1 01 52 0 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a 0 1 2 3 4 5 6 7 8 9 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 11v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f (v) 0 20 40 60 80 100 i f ( a ) t j = -40c t j = 25c t j =175c 2 4 6 8 10 12 14 16 v ge, gate-to-emitter voltage (v) 0 20 40 60 80 100 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 175c downloaded from: http:///

fig. 13 - typ. energy loss vs. i c t j = 175c; l = 210 h; v ce = 400v, r g = 10 ; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l = 210 h; v ce = 400v, r g = 10 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 210 h; v ce = 400v, i ce = 24a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l = 210 h; v ce = 400v, i ce = 24a; v ge = 15v fig. 17 - typ. diode i rr vs. i f t j = 175c fig. 18 - typ. diode i rr vs. r g t j = 175c 0 1 02 03 04 05 0 i c (a) 0 500 1000 1500 2000 2500 e n e r g y ( j ) e off e on 0 10 20 30 40 50 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 120 r g ( ) 0 400 800 1200 1600 2000 e n e r g y ( j ) e off e on 0 20 40 60 80 100 r g ( ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 10 15 20 25 30 35 40 45 50 i f (a) 5 10 15 20 25 30 35 i r r ( a ) r g = 22 r g = 47 r g = 10 r g = 100 0 20 40 60 80 100 r g ( ) 10 15 20 25 30 35 i r r ( a ) downloaded from: http:///

fig. 19 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 24a; t j = 175c fig. 20 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 24 - typical gate charge vs. v ge i ce = 24a; l = 585 h fig. 21 - typ. diode e rr vs. i f t j = 175c fig. 22 - v ge vs. short circuit time v cc = 400v; t c = 25c 0 200 400 600 800 1000 1200 di f /dt (a/ s) 15 20 25 30 35 i r r ( a ) 200 400 600 800 1000 1200 di f /dt (a/ s) 1000 2000 3000 4000 5000 6000 q r r ( n c ) 22 10 100 47 12a 48a 24a 10 20 30 40 50 i f (a) 0 500 1000 1500 2000 e n e r g y ( j ) r g = 10 r g = 22 r g = 47 r g = 100 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 1 02 03 04 05 06 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v 8 1 01 21 41 61 8 v ge (v) 0 4 8 12 16 t i m e ( s ) 50 100 150 200 250 c u r r e n t ( a ) t sc i sc downloaded from: http:///

fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.2164 0.000260.2800 0.00252 0.1937 0.01593 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.0408 0.000050.4339 0.00026 0.4778 0.00335 0.2480 0.02157 downloaded from: http:///

fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm fig.c.t.3 - s.c. soa circuit dc 4x dut vcc scsoa fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v downloaded from: http:///

fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -10 0 10 20 30 40 50 60 -100 0 100 200 300 400 500 600 -0.3 -0.05 0.2 0.45 0.7 i ce (a) v ce (v) time( s) 90% i ce 5% v ce 10% i ce eoff loss tf -10 0 10 20 30 40 50 60 -100 0 100 200 300 400 500 600 -0.3 -0.05 0.2 0.45 0.7 i ce (a) v ce (v) time ( s) test current 90% 5% v ce 10% tr eon loss -35 -28 -21 -14 -7 0 7 14 21 28 35 -0.25 0.00 0.25 0.50 i f (a) time ( s) peak i rr t rr q rr -100 0 100 200 300 400 500 -100 0 100 200 300 400 500 - 202468 ice (a) vce (v) time (us) vce ice downloaded from: http:///

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+ qualification information ? 3l-to-247ac 3l-to-247ad rohs compliant yes esd machine model class m4 (+/- 700v ) (per aec-q101-002) human body model class h1c (+/- 2000v ) (per aec-q101-001) charged device model class c5(+/- 2000v ) (per aec-q101-005) qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level n/ a downloaded from: http:///

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